EPC2215

EPC

Product No:

EPC2215

Manufacturer:

Package:

Die

Batch:

Datasheet:

Description:

GAN TRANS 200V 8MOHM BUMPED DIE

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1790 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	17.7 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8mOhm @ 20A, 5V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 6mA
Supplier Device Package	Die
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	-
Series	-
Package / Case	Die
Technology	GaNFET (Gallium Nitride)
Mfr	EPC
Current - Continuous Drain (Id) @ 25°C	32A (Ta)
Vgs (Max)	+6V, -4V
Drive Voltage (Max Rds On, Min Rds On)	5V
Package	Tape & Reel (TR)