HAT1089C-EL-E

Renesas

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HAT1089C-EL-E

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6-CMFPAK

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Description:

HAT1089C - Pch Single Power Mosf

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	365 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	4.5 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	103mOhm @ 1A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.4V @ 1mA
Supplier Device Package	6-CMFPAK
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	850mW (Ta)
Series	-
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Mfr	Renesas
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Bulk