HAT2165HWS-E

Renesas Electronics America Inc

Product No:

HAT2165HWS-E

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Package:

LFPAK

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Description:

MOSFET N-CH 30V 55A 5LFPAK

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.3mOhm @ 27.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	LFPAK
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	30W (Tc)
Series	-
Package / Case	SC-100, SOT-669
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	55A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)