HAT2185WPWS-E

Renesas Electronics America Inc

Product No:

HAT2185WPWS-E

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Package:

8-WPAK (3)

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Description:

MOSFET N-CH 150V 10A 8WPAK

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	9.7 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	190mOhm @ 5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4.5V @ 1mA
Supplier Device Package	8-WPAK (3)
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	20W (Tc)
Series	-
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)