HAT2196C-EL-E

Renesas

Product No:

HAT2196C-EL-E

Manufacturer:

Package:

6-CMFPAK

Batch:

Datasheet:

Description:

HAT2196C - N-CHANNEL POWER MOSFE

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	270 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	2.8 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	58mOhm @ 1.3A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.4V @ 1mA
Supplier Device Package	6-CMFPAK
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	850mW (Ta)
Series	-
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Mfr	Renesas
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Bulk