HTNFET-D

Honeywell Aerospace

Product No:

HTNFET-D

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Package:

8-CDIP-EP

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Description:

MOSFET N-CH 55V 8CDIP

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Operating Temperature	-55°C ~ 225°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 28 V
Gate Charge (Qg) (Max) @ Vgs	4.3 nC @ 5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	400mOhm @ 100mA, 5V
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 100µA
Supplier Device Package	8-CDIP-EP
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	50W (Tj)
Series	HTMOS™
Package / Case	8-CDIP Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Honeywell Aerospace
Current - Continuous Drain (Id) @ 25°C	-
Vgs (Max)	10V
Drive Voltage (Max Rds On, Min Rds On)	5V
Package	Bulk
Base Product Number	HTNFET