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N0608N-ZK-E1-AY

Renesas Electronics America Inc

Product No:

N0608N-ZK-E1-AY

Package:

TO-252

Batch:

-

Datasheet:

-

Description:

ABU / MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 14.3mOhm @ 26A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package TO-252
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 1W (Ta), 50.2W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)