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NP50P03YDG-E1-AY

Renesas Electronics America Inc

Product No:

NP50P03YDG-E1-AY

Package:

8-HSON

Batch:

-

Datasheet:

-

Description:

MOSFET P-CH 30V 50A 8HSON

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 96 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8.4mOhm @ 25A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-HSON
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1W (Ta), 102W (Tc)
Series -
Package / Case 8-SMD, Flat Lead Exposed Pad
Technology MOSFET (Metal Oxide)
Mfr Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Package Tape & Reel (TR)
Base Product Number NP50P03