NP60N06PDK-E1-AY

Renesas Electronics America Inc

Product No:

NP60N06PDK-E1-AY

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Package:

TO-263-3

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Description:

MOSFET TRANSISTOR MORE 1 W

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-263-3
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	105W
Series	Automotive, AEC-Q101
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	60A
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	NP60N06