NP80N055PDG-E1B-AY

Renesas Electronics America Inc

Product No:

NP80N055PDG-E1B-AY

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Package:

TO-263

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Description:

MOSFET N-CH 55V 80A TO263

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Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	135 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6.6mOhm @ 40A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-263
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	1.8W (Ta), 115W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Package	Bulk