NP82N10PUF-E1-AY

Renesas

Product No:

NP82N10PUF-E1-AY

Manufacturer:

Package:

TO-263-3

Batch:

Datasheet:

Description:

NP82N10PUF-E1-AY - MOS FIELD EFF

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	96 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	15mOhm @ 41A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.3V @ 250µA
Supplier Device Package	TO-263-3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	1.8W (Ta), 150W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Renesas
Current - Continuous Drain (Id) @ 25°C	82A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5.8V, 10V
Package	Bulk