NP88N04NUG-S18-AY

Renesas

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NP88N04NUG-S18-AY

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Package:

TO-262

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NP88N04NUG-S18-AY - MOS FIELD EF

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	15000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	250 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.4mOhm @ 44A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-262
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	1.8W (Ta), 200W (Tc)
Series	-
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	Renesas
Current - Continuous Drain (Id) @ 25°C	88A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk