TRS12V65H,LQ

Toshiba Semiconductor and Storage

Product No:

TRS12V65H,LQ

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Package:

4-DFN-EP (8x8)

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Description:

G3 SIC-SBD 650V 12A DFN8X8

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Speed	No Recovery Time > 500mA (Io)
Capacitance @ Vr, F	778pF @ 1V, 1MHz
Reverse Recovery Time (trr)	0 ns
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	4-DFN-EP (8x8)
Current - Reverse Leakage @ Vr	120 µA @ 650 V
Series	-
Package / Case	4-VSFN Exposed Pad
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.35 V @ 12 A
Mfr	Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tape & Reel (TR)
Operating Temperature - Junction	175°C
Current - Average Rectified (Io)	12A