TSM10NC65CF

Taiwan Semiconductor Corporation

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TSM10NC65CF

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ITO-220S

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Description:

650V, 10A, SINGLE N-CHANNEL POWE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1650 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	900mOhm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	ITO-220S
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	45W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TSM10