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2N6661JTX02

Vishay Siliconix

Product No:

2N6661JTX02

Manufacturer:

Vishay Siliconix

Package:

TO-39

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 90V 860MA TO39

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 4Ohm @ 1A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 1mA
Supplier Device Package TO-39
Drain to Source Voltage (Vdss) 90 V
Power Dissipation (Max) 725mW (Ta), 6.25W (Tc)
Series -
Package / Case TO-205AD, TO-39-3 Metal Can
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 860mA (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Package Tube
Base Product Number 2N6661