2N6661JTXP02

Vishay Siliconix

Product No:

2N6661JTXP02

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Package:

TO-39

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Description:

MOSFET N-CH 90V 860MA TO39

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	50 pF @ 25 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	4Ohm @ 1A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 1mA
Supplier Device Package	TO-39
Drain to Source Voltage (Vdss)	90 V
Power Dissipation (Max)	725mW (Ta), 6.25W (Tc)
Series	-
Package / Case	TO-205AD, TO-39-3 Metal Can
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	860mA (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Tube
Base Product Number	2N6661