BUK652R1-30C,127

NXP USA Inc.

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BUK652R1-30C,127

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Package:

TO-220AB

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Description:

MOSFET N-CH 30V 120A TO220AB

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	10918 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	168 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.4mOhm @ 25A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.8V @ 1mA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	263W (Tc)
Series	TrenchMOS™
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	BUK65