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BUK652R7-30C,127

NXP USA Inc.

Product No:

BUK652R7-30C,127

Manufacturer:

NXP USA Inc.

Package:

TO-220AB

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 30V 100A TO220AB

Quantity:

Delivery:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 6960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 3.3mOhm @ 25A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.8V @ 1mA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 204W (Tc)
Series TrenchMOS™
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Vgs (Max) ±16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube
Base Product Number BUK65