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FB180SA10

Vishay General Semiconductor - Diodes Division

Product No:

FB180SA10

Package:

SOT-227

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 180A SOT-227

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 10700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 380 nC @ 10 V
Mounting Type Chassis Mount
Rds On (Max) @ Id, Vgs 6.5mOhm @ 108A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package SOT-227
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 480W (Tc)
Series HEXFET®
Package / Case SOT-227-4, miniBLOC
Technology MOSFET (Metal Oxide)
Mfr Vishay General Semiconductor - Diodes Division
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number FB180