VS-FB190SA10

Vishay General Semiconductor - Diodes Division

Product No:

VS-FB190SA10

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Package:

SOT-227

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Description:

MOSFET N-CH 100V 190A SOT227

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	10700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	250 nC @ 10 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	6.5mOhm @ 180A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4.35V @ 250µA
Supplier Device Package	SOT-227
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	568W (Tc)
Series	-
Package / Case	SOT-227-4, miniBLOC
Technology	MOSFET (Metal Oxide)
Mfr	Vishay General Semiconductor - Diodes Division
Current - Continuous Drain (Id) @ 25°C	190A (Tj)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	FB190