GE12047CCA3

GE Aerospace

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GE12047CCA3

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Module

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Description:

1200V 475A SIC HALF-BRIDGE

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Operating Temperature	-55°C ~ 150°C (Tc)
FET Feature	Silicon Carbide (SiC)
Configuration	2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	29300pF @ 600V
Gate Charge (Qg) (Max) @ Vgs	1248nC @ 18V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	4.4mOhm @ 475A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 160mA
Supplier Device Package	Module
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	SiC Power
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	1250W
Mfr	GE Aerospace
Current - Continuous Drain (Id) @ 25°C	475A
Package	Box
Base Product Number	GE12047