GE17042CCA3

GE Aerospace

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GE17042CCA3

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Module

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Description:

1700V 425A SiC Half-Bridge

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Operating Temperature	175°C (TJ)
FET Feature	Silicon Carbide (SiC)
Configuration	2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	29100pF @ 900V
Gate Charge (Qg) (Max) @ Vgs	1207nC @ 18V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	4.45mOhm @ 425A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 160mA
Supplier Device Package	Module
Drain to Source Voltage (Vdss)	1700V (1.7kV)
Series	SiC Power
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	1250W
Mfr	GE Aerospace
Current - Continuous Drain (Id) @ 25°C	425A (Tc)
Package	Bulk
Base Product Number	GE17042