GE12160CEA3

GE Aerospace

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GE12160CEA3

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Module

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1200V 1425A SiC Half-Bridge

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Operating Temperature	-55°C ~ 150°C (Tc)
FET Feature	Silicon Carbide (SiC)
Configuration	2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	90000pF @ 600V
Gate Charge (Qg) (Max) @ Vgs	3744nC @ 18V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	1.5mOhm @ 475A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 480mA
Supplier Device Package	Module
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	SiC Power
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	3.75kW (Tc)
Mfr	GE Aerospace
Current - Continuous Drain (Id) @ 25°C	1.425kA (Tc)
Package	Bulk
Base Product Number	GE12160