HAT2165N-EL-E

Renesas Electronics America Inc

Product No:

HAT2165N-EL-E

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Package:

8-LFPAK-iV

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Description:

MOSFET N-CH 30V 55A 8LFPAK

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.6mOhm @ 27.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	-
Supplier Device Package	8-LFPAK-iV
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	30W (Tc)
Series	-
Package / Case	8-PowerSOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	55A (Ta)
Package	Bulk