HS54095TZ-E

Renesas Electronics America Inc

Product No:

HS54095TZ-E

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Package:

TO-92-3

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Description:

MOSFET N-CH 600V 200MA TO92-3

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	66 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	4.8 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	16.5Ohm @ 100mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	-
Supplier Device Package	TO-92-3
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	750mW (Ta)
Series	-
Package / Case	TO-226-3, TO-92-3 Short Body
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)