NP28N10SDE-E1-AY

Renesas

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NP28N10SDE-E1-AY

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TO-252 (MP-3ZK)

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NP28N10SDE-E1-AY - MOS FIELD EFF

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	52mOhm @ 14A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-252 (MP-3ZK)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	1.2W (Ta), 100W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Renesas
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk