NP33N06YDG-E1-AY

Renesas Electronics America Inc

Product No:

NP33N06YDG-E1-AY

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Package:

8-HSON

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Description:

MOSFET N-CH 60V 33A 8HSON

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Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	78 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	14mOhm @ 16.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-HSON
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	1W (Ta), 97W (Tc)
Series	-
Package / Case	8-SMD, Flat Lead Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Tape & Reel (TR)
Base Product Number	NP33N06