NP35N04YLG-E1-AY

Renesas Electronics America Inc

Product No:

NP35N04YLG-E1-AY

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Package:

8-HSON (5x5.4)

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Description:

ABU / MOSFET

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Operating Temperature	175°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	51 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	9.7mOhm @ 17.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-HSON (5x5.4)
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	1W (Ta), 77W (Tc)
Series	-
Package / Case	8-PowerLDFN
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Tape & Reel (TR)