NP80N055NDG-S18-AY

Renesas Electronics America Inc

Product No:

NP80N055NDG-S18-AY

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Package:

TO-262

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Description:

MOSFET N-CH 55V 80A TO262

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Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	135 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	6.9mOhm @ 40A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-262
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	1.8W (Ta), 115W (Tc)
Series	-
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube