SCTW35N65G2V

STMicroelectronics

Product No:

SCTW35N65G2V

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Package:

HiP247™

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Description:

SICFET N-CH 650V 45A HIP247

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Operating Temperature	-55°C ~ 200°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 20 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	67mOhm @ 20A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 1mA
Supplier Device Package	HiP247™
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	240W (Tc)
Series	Automotive, AEC-Q101
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V, 20V
Package	Tube
Base Product Number	SCTW35