STB26NM60ND

STMicroelectronics

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STB26NM60ND

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Package:

D²PAK (TO-263)

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Description:

MOSFET N-CH 600V 21A D2PAK

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1817 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	54.6 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	175mOhm @ 10.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	D²PAK (TO-263)
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	190W (Tc)
Series	FDmesh™ II
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	STB26N