STD1HN60K3

STMicroelectronics

Product No:

STD1HN60K3

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Package:

DPAK

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Description:

MOSFET N-CH 600V 1.2A DPAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	9.5 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8Ohm @ 600mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 50µA
Supplier Device Package	DPAK
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	27W (Tc)
Series	SuperMESH3™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	1.2A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	STD1HN60