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STH180N10F3-6

STMicroelectronics

Product No:

STH180N10F3-6

Manufacturer:

STMicroelectronics

Package:

H2PAK-6

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 100V 180A H2PAK-6

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 6665 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 114.6 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.5mOhm @ 60A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package H2PAK-6
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 315W (Tc)
Series STripFET™ III
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Technology MOSFET (Metal Oxide)
Mfr STMicroelectronics
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number STH180