STH200N10WF7-2

STMicroelectronics

Product No:

STH200N10WF7-2

Manufacturer:

Package:

H2Pak-2

Batch:

Datasheet:

Description:

N-CHANNEL 100 V, 4.8 MOHM TYP.,

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	93 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4mOhm @ 90A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	H2Pak-2
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	340W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)