STH315N10F7-6

STMicroelectronics

Product No:

STH315N10F7-6

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Package:

H2PAK-6

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Description:

MOSFET N-CH 100V 180A H2PAK-6

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	12800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	180 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.3mOhm @ 60A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	H2PAK-6
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	315W (Tc)
Series	Automotive, AEC-Q101, DeepGATE™, STripFET™ VII
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Technology	MOSFET (Metal Oxide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	STH315