STI10N62K3

STMicroelectronics

Product No:

STI10N62K3

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Package:

I2PAK

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Description:

MOSFET N-CH 620V 8.4A I2PAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	750mOhm @ 4A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4.5V @ 100µA
Supplier Device Package	I2PAK
Drain to Source Voltage (Vdss)	620 V
Power Dissipation (Max)	125W (Tc)
Series	SuperMESH3™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	8.4A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STI10N