STW56N65M2-4

STMicroelectronics

Product No:

STW56N65M2-4

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Package:

TO-247-4

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Description:

MOSFET N-CH 650V 49A TO247-4L

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	93 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	62mOhm @ 24.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-247-4
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	358W (Tc)
Series	MDmesh™ M2
Package / Case	TO-247-4
Technology	MOSFET (Metal Oxide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	49A (Tc)
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	STW56