TRS8E65H,S1Q

Toshiba Semiconductor and Storage

Product No:

TRS8E65H,S1Q

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Package:

TO-220-2L

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Description:

G3 SIC-SBD 650V 8A TO-220-2L

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Speed	No Recovery Time > 500mA (Io)
Capacitance @ Vr, F	520pF @ 1V, 1MHz
Reverse Recovery Time (trr)	0 ns
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	TO-220-2L
Current - Reverse Leakage @ Vr	90 µA @ 650 V
Series	-
Package / Case	TO-220-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.35 V @ 8 A
Mfr	Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tube
Operating Temperature - Junction	175°C
Current - Average Rectified (Io)	8A