2N7002E-T1-GE3

Vishay Siliconix

Product No:

2N7002E-T1-GE3

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Package:

TO-236

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Description:

MOSFET N-CH 60V 240MA TO236

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	21 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs	0.6 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3Ohm @ 250mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	TO-236
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	350mW (Ta)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	240mA (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	2N7002