IRFBG20L

Vishay Siliconix

Product No:

IRFBG20L

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Package:

I2PAK

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Description:

MOSFET N-CH 1000V 1.4A I2PAK

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Operating Temperature	-
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	11Ohm @ 840mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	I2PAK
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	-
Series	-
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	1.4A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IRFBG20