IRLD110

Vishay Siliconix

Product No:

IRLD110

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Package:

4-HVMDIP

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Description:

MOSFET N-CH 100V 1A 4DIP

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	6.1 nC @ 5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	540mOhm @ 600mA, 5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	4-HVMDIP
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	1.3W (Ta)
Series	-
Package / Case	4-DIP (0.300", 7.62mm)
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	4V, 5V
Package	Tube
Base Product Number	IRLD110