SSM5N16FU,LF

Toshiba Semiconductor and Storage

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SSM5N16FU,LF

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USV

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Description:

PB-F SMALL LOW ON RESISTANCE MOS

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Operating Temperature	150°C
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	9.3pF @ 3V
Gate Charge (Qg) (Max) @ Vgs	-
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3Ohm @ 10mA, 4V
Product Status	Active
Vgs(th) (Max) @ Id	1.1V @ 100µA
Supplier Device Package	USV
Drain to Source Voltage (Vdss)	20V
Series	-
Package / Case	5-TSSOP, SC-70-5, SOT-353
Technology	MOSFET (Metal Oxide)
Power - Max	200mW (Ta)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Package	Tape & Reel (TR)
Base Product Number	SSM5N16