SSM6L09FUTE85LF

Toshiba Semiconductor and Storage

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SSM6L09FUTE85LF

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Package:

US6

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Description:

MOSFET N/P-CH 30V 0.4A/0.2A US6

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Operating Temperature	150°C (TJ)
FET Feature	Logic Level Gate
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	20pF @ 5V
Gate Charge (Qg) (Max) @ Vgs	-
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	700mOhm @ 200MA, 10V
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	1.8V @ 100µA
Supplier Device Package	US6
Drain to Source Voltage (Vdss)	30V
Series	-
Package / Case	6-TSSOP, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Power - Max	300mW
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	400mA, 200mA
Package	Tape & Reel (TR)
Base Product Number	SSM6L09