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SSM6L35FE,LM

Toshiba Semiconductor and Storage

Product No:

SSM6L35FE,LM

Package:

ES6

Batch:

-

Datasheet:

-

Description:

MOSFET N/P-CH 20V 0.18A/0.1A ES6

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature Logic Level Gate
Configuration N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 3V
Gate Charge (Qg) (Max) @ Vgs -
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3Ohm @ 50mA, 4V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 1mA
Supplier Device Package ES6
Drain to Source Voltage (Vdss) 20V
Series -
Package / Case SOT-563, SOT-666
Technology MOSFET (Metal Oxide)
Power - Max 150mW
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 180mA, 100mA
Package Tape & Reel (TR)
Base Product Number SSM6L35