SSM6N15AFE,LM

Toshiba Semiconductor and Storage

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SSM6N15AFE,LM

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Package:

ES6

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Description:

MOSFET 2N-CH 30V 0.1A ES6

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Operating Temperature	150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	13.5pF @ 3V
Gate Charge (Qg) (Max) @ Vgs	-
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4Ohm @ 10mA, 4V
Product Status	Active
Vgs(th) (Max) @ Id	1.5V @ 100µA
Supplier Device Package	ES6
Drain to Source Voltage (Vdss)	30V
Series	-
Package / Case	SOT-563, SOT-666
Technology	MOSFET (Metal Oxide)
Power - Max	150mW
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	100mA
Package	Tape & Reel (TR)
Base Product Number	SSM6N15