Toshiba Semiconductor and Storage
Product No:
SSM6L35FU(TE85L,F)
Manufacturer:
Package:
US6
Batch:
-
Datasheet:
-
Description:
MOSFET N/P-CH 20V 0.18A/0.1A US6
Quantity:
Delivery:
Payment:
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | Logic Level Gate, 1.2V Drive |
Configuration | N and P-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 3V |
Gate Charge (Qg) (Max) @ Vgs | - |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 3Ohm @ 50mA, 4V |
Product Status | Active |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Supplier Device Package | US6 |
Drain to Source Voltage (Vdss) | 20V |
Series | - |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Technology | MOSFET (Metal Oxide) |
Power - Max | 200mW |
Mfr | Toshiba Semiconductor and Storage |
Current - Continuous Drain (Id) @ 25°C | 180mA, 100mA |
Package | Tape & Reel (TR) |
Base Product Number | SSM6L35 |