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SSM6L35FU(TE85L,F)

Toshiba Semiconductor and Storage

Product No:

SSM6L35FU(TE85L,F)

Package:

US6

Batch:

-

Datasheet:

-

Description:

MOSFET N/P-CH 20V 0.18A/0.1A US6

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Logic Level Gate, 1.2V Drive
Configuration N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 3V
Gate Charge (Qg) (Max) @ Vgs -
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3Ohm @ 50mA, 4V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 1mA
Supplier Device Package US6
Drain to Source Voltage (Vdss) 20V
Series -
Package / Case 6-TSSOP, SC-88, SOT-363
Technology MOSFET (Metal Oxide)
Power - Max 200mW
Mfr Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C 180mA, 100mA
Package Tape & Reel (TR)
Base Product Number SSM6L35