SSM6L820R,LF

Toshiba Semiconductor and Storage

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SSM6L820R,LF

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Package:

6-TSOP-F

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Description:

SMALL SIGNAL MOSFET N-CH+P-CH VD

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Operating Temperature	150°C
FET Feature	-
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	310pF @ 15V, 480pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	3.2nC @ 4.5V, 6.7nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA, 1.2V @ 1mA
Supplier Device Package	6-TSOP-F
Drain to Source Voltage (Vdss)	30V, 20V
Series	Automotive, AEC-Q101
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Power - Max	1.4W (Ta)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Package	Tape & Reel (TR)
Base Product Number	SSM6L820