SSM6P35AFU,LF

Toshiba Semiconductor and Storage

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SSM6P35AFU,LF

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US6

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Description:

SMALL SIGNAL MOSFET P-CH X 2 VDS

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Operating Temperature	150°C
FET Feature	Logic Level Gate, 1.2V Drive
Configuration	2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	42pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	-
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.4Ohm @ 150mA, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 100µA
Supplier Device Package	US6
Drain to Source Voltage (Vdss)	20V
Series	U-MOSVII
Package / Case	6-TSSOP, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Power - Max	285mW (Ta)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	250mA (Ta)
Package	Tape & Reel (TR)
Base Product Number	SSM6P35