SSM6P816R,LF

Toshiba Semiconductor and Storage

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SSM6P816R,LF

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Package:

6-TSOP-F

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Description:

P-CH X 2 MOSFET, -20 V, -6 A, 0.

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Operating Temperature	150°C
FET Feature	Logic Level Gate, 1.8V Drive
Configuration	2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	1030pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	16.6nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	30.1mOhm @ 4A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	6-TSOP-F
Drain to Source Voltage (Vdss)	20V
Series	-
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Power - Max	1.4W (Ta)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Package	Tape & Reel (TR)
Base Product Number	SSM6P816