TP0610K-T1-GE3

Vishay Siliconix

Product No:

TP0610K-T1-GE3

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Package:

SOT-23-3 (TO-236)

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Description:

MOSFET P-CH 60V 185MA SOT23-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	23 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	1.7 nC @ 15 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6Ohm @ 500mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	350mW (Ta)
Series	TrenchFET®
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	185mA (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	TP0610